230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

23 December 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 225-228
https://doi.org/10.1109/bipol.2004.1365786

Abstract

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

Keywords

HETEROJUNCTION BIPOLAR TRANSISTORS
BICMOS INTEGRATED CIRCUITS
EPITAXIAL GROWTH
CMOS TECHNOLOGY
ARTIFICIAL INTELLIGENCE
LITHOGRAPHY
AUTOMOTIVE ENGINEERING
LASER RADAR
OPTICAL FIBER COMMUNICATION
CUTOFF FREQUENCY

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