Low compensation vapor phase epitaxial gallium arsenide
- 1 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 282-284
- https://doi.org/10.1063/1.94327
Abstract
Vapor phase epitaxial gallium arsenide (GaAs) layers, with lower compensation ratios than any reported heretofore, have been reproducibly grown by the Ga/H2/AsCl3 method. One of these samples has been studied extensively by electrical measurements and shows an acceptor concentration of (2.0±0.7)×1013 cm−3, and a compensation rate of NA/ND =0.06±0.02. These numbers are supported by magnetophotothermal spectroscopy and photoluminescence measurements. The preparation involves growth on [211A] substrates, and a pregrowth bakeout of the Ga source, which results in a significantly lower Zn acceptor concentration in the layer. These results have important implications for various compensation mechanisms which have been proposed for GaAs.Keywords
This publication has 6 references indexed in Scilit:
- Liquid phase epitaxial growth of Zn and S doped GaAsJournal of Crystal Growth, 1979
- Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenideJournal of Physics and Chemistry of Solids, 1979
- Electron mobility in vapor-grown GaAs filmsJournal of Applied Physics, 1978
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Self-compensation of donors in high-purity GaAsApplied Physics Letters, 1975
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970