Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects
- 15 June 2004
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 109 (1-3) , 6-10
- https://doi.org/10.1016/j.mseb.2003.10.020
Abstract
No abstract availableKeywords
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