On dislocation generation in semiconductor crystals
- 1 December 1989
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 111-112 (1-2) , 1-12
- https://doi.org/10.1080/10420158908212976
Abstract
Thermal fluctuations combined with moderate stress are not able to nucleate dislocations in a perfect crystal. Rather some heterogeneous nucleation (surface defects, precipitates, lattice mismatch etc.) is necessary. The multiplication of so generated dislocation loops in growing crystals is largely determined by thermal stresses and proceeds by dislocation motion. Its kinetics, therefore, are thermally activated like plastic deformation.Keywords
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