Total energies in Se. III. Defects in the glass
- 15 May 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (10) , 6311-6321
- https://doi.org/10.1103/physrevb.27.6311
Abstract
The effective Hubbard for the bonding coordination defect in glassy Se is investigated. This is accomplished by applying local-density total-energy calculations directly to charged defects in a superlattice configuration. The existence of a large negative contribution to , arising from interconversion between dangling-bond and threefold-coordinated structures, is confirmed. However, a still larger Coulomb repulsion gives rise to an overall positive .
Keywords
This publication has 28 references indexed in Scilit:
- Defect chemistry of lone-pair semiconductorsPhilosophical Magazine Part B, 1978
- Optically induced metastable paramagnetic states in amorphous semiconductorsPhysical Review B, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Luminescence in amorphous semiconductorsAdvances in Physics, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- The mobility of photo-induced carriers in disordered As2Te3and As30Te48Si12Ge10Philosophical Magazine, 1975
- Optically Induced Localized Paramagnetic States in Chalcogenide GlassesPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Nature of Localized States in Amorphous Semiconductors—A Study by Electron Spin ResonancePhysical Review B, 1973