Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy
- 1 May 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (3) , 441-470
- https://doi.org/10.1016/0022-0248(90)90403-8
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Hydrodynamic dispersion in rotating-disk omvpe reactors: Numerical simulation and experimental measurementsJournal of Crystal Growth, 1989
- Models and Mechanisms of III-V Compound Semiconductor Growth by MovpeMRS Proceedings, 1989
- Elementary processes and rate-limiting factors in MOVPE of GaAsJournal of Crystal Growth, 1988
- Peculiar asymmetric flow pattern in a vertical axisymmetric VPE reactorJournal of Crystal Growth, 1988
- Limitations to the omvpe growth of Hg compounds due to hydrodynamic effectsMaterials Letters, 1988
- Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptnessJournal of Crystal Growth, 1987
- EFFECTS OF BOUNDARY CONDITIONS ON THE FLOW AND HEAT TRANSFER IN A ROTATING DISK CHEMICAL VAPOR DEPOSITION REACTORNumerical Heat Transfer, 1987
- Vapor levitation epitaxy: system design and performanceJournal of Crystal Growth, 1986
- Thermal Diffusion Effects in Chemical Vapor Deposition ReactorsJournal of the Electrochemical Society, 1984
- Silicon Deposition on a Rotating DiskJournal of the Electrochemical Society, 1980