Infrared–microwave double resonance spectroscopy of the SiF4 ν3 fundamental using a tunable diode laser

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Abstract
Pure rotational spectrum of silicon tetrafluoride SiF4 is investigated in the ν3 vibrational state by infrared–microwave double resonance. Frequency tunable semiconductor diode lasers are used as an infrared pumping radiation source. 106 radiofrequency transitions among the tetrahedral fine structure splittings and 60 microwave transitions among the various Coriolis sublevels are measured with an accuracy of a few tens of kilohertz. Seven scalar and four tensor constants of the excited state are determined accurately. A part of the badly congested infrared Q‐branch spectrum is analyzed on the basis of assignment by double resonance. Three ground‐state constants B0, D0, and D044 are determined.