Solid phase epitaxial regrowth of boron-doped polycrystalline silicon deposited by low-pressure chemical vapor deposition
- 24 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (8) , 611-613
- https://doi.org/10.1063/1.98363
Abstract
Solid phase epitaxial regrowth of polycrystalline silicon deposited on ‘‘oxide-free’’ (100) oriented single-crystal substrates and implanted with boron is investigated by means of secondary ion mass spectrometry, Rutherford backscattering channeling, and transmission electron microscopy. The effects of annealing ambients and heavy doping on the regrowth rate are also studied.Keywords
This publication has 1 reference indexed in Scilit:
- Epitaxial alignment of polycrystalline Si films on (100) SiApplied Physics Letters, 1980