Weak localization in thin Cs films

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Abstract
Thin, quench condensed films of Cs change their resistance and Hall effect dramatically when covered with surface impurities. In this paper we investigate the quantum interference corrections to the resistance (weak localization) and determine the inelastic dephasing rate of the conduction electrons. The dephasing rate is proportional to the temperature-dependent resistance. For pure Cs films the magnetoresistance curves show a rather poor agreement with the theory, which is exceptional for quench condensed metal films. In particular, at 4.5 K a linear magnetoresistance is observed at large magnetic fields, which defies explanation. Sandwiches of AgCs yield a much better agreement between the experimental results and the theory. However, the dephasing rate of Cs in Ag/Cs and Au/Cs sandwiches has only half the value of that in pure Cs films with the same thickness and mean free path.

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