Semiconducting oxides: effects of electronic and surface structure on dissolution kinetics of nickel oxide

Abstract

The effect of decreasing dissolution rate of nickel oxide per unit surface area in acid solution with increasing prior annealing temperature (700–1450°C) has been shown to occur over a wide range of pH. The linear dependence of log (rate) on pH may be explained on a model of non-oxidative dissolution in which the pH variation changes the overpotential at the surface. Electron microscopy shows a different mode of attack at pH < 0. The presence in solution of a strong oxidizing ion such as cobaltic causes a very large increase in dissolution rate (> 200 fold) for all prior annealing temperatures but the oxide annealed at 1450°C is still the slowest to dissolve in the presence of cobaltic ions. This is believed to be because it has the lowest kink site density, the role of the Co³⁺ being hole injection into the p-type semiconductor at kink sites. The general conclusion of the work is that the supply of the majority carriers (the holes) may be rate limiting in the dissolution process.

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