IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (12) , 650-653
- https://doi.org/10.1109/55.20425
Abstract
IrSi Schottky-barrier detectors were fabricated with approximately 40-AA-thick silicide electrodes formed on p-type Si substrates by in situ processing in a conventional electron-beam evaporator. High-resolution transmission electron microscopy shows that these detectors have clean, abrupt silicide-Si interfaces. For operation at a reverse-bias voltage of 2 V, the cutoff wavelength is approximately 10 mu m, as determined by quantum efficiency measurements.<>Keywords
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