FORMATION OF INTERFACES AND TEMPLATES IN THE Si(111)-Cr SYSTEM

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Abstract
The literature data and new data on investigation of the Si(111)-Cr system were systematized to the diagram of structural phase transitions. The ranges on this diagram give the formation conditions of various phases and reflect the mechanism of the Cr/Si (111) and CrSi 2/ Si (111) interface formation during room-temperature Cr deposition following annealing. The proofs of the multilayer surface phase formation and the data about transitions between the multilayer surface phases and bulk silicides during formation of the Cr/Si (111) and CrSi 2/ Si (111) interfaces were presented. The investigation of A- and B-type CrSi 2 templates formation was carried out. It was discovered that nucleation conditions and, in particular, the type of surface phases determine the azimuthal orientation of the epitaxial CrSi 2 islands relative to Si (111) under their nucleation. The A- and B-type CrSi 2 epitaxial films were grown by means of the template technique. The A-type CrSi 2 semiconductor film with low concentration and high mobility of holes was obtained.

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