Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 497-500
- https://doi.org/10.1109/iedm.1998.746406
Abstract
Boron segregation and transient enhanced diffusion (TED) of boron atoms during annealing were investigated under two types of wafers implanted with Si ions. We found the following facts: (1) boron segregation to {311} defects has been observed at low temperature annealing. (2) {311} defects were formed in the area where the self-interstitial concentration exceeds 3/spl times/10/sup 17/ cm/sup -3/. (3) Free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.Keywords
This publication has 7 references indexed in Scilit:
- Ostwald ripening of end-of-range defects in siliconJournal of Applied Physics, 1998
- Physical mechanisms of transient enhanced dopant diffusion in ion-implanted siliconJournal of Applied Physics, 1997
- Simulation of cluster evaporation and transient enhanced diffusion in siliconApplied Physics Letters, 1996
- Modeling of the Kinetics of Dopant Precipitation in SiliconJournal of the Electrochemical Society, 1995
- Implantation and transient B diffusion in Si: The source of the interstitialsApplied Physics Letters, 1994
- Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chainPhilosophical Magazine A, 1994
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988