A new, insulated-gate transistor

• 1 January 1966
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 58-59
• https://doi.org/10.1109/isscc.1966.1157687

Abstract

Keywords

• INSULATION
• DIODES
• FETS
• MOS CAPACITORS
• FABRICATION
• THRESHOLD VOLTAGE
• DIELECTRIC SUBSTRATES
• ELECTRODES
• SILICON ON INSULATOR TECHNOLOGY
• SURFACE TREATMENT