Nitrogen incorporation in thin oxides by constant current N2O plasma anodization of silicon and N2 plasma nitridation of silicon oxides
- 19 August 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (8) , 1053-1055
- https://doi.org/10.1063/1.116928
Abstract
A helical resonator plasma source was used to perform constant current N2O plasma anodization of silicon and N2 plasma nitridation of silicon oxides. The nitrogen bonding structure and distribution in the oxides were studied using angle resolved x‐ray photoelectron spectroscopy. Nitrogen corresponding to a N–Si3 bonding structure was detected at the silicon side of the interface, the Si–SiO2 interfacial region, and the bulk oxide in a 4.5 nm N2O plasma grown oxide. The distribution profile of nitrogen in the oxide, determined from a normalized N 1s/Si 2p(ox) ratio, showed a continuous decrease from the silicon side of the interface towards the bulk oxide. Also, strong nitrogen peaks corresponding to either a N–Si3 or a N–Si2 bonding structure were detected throughout a 9.1 nm O2 plasma grown oxide after postanodization constant current N2 plasma nitridation.Keywords
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