Y–Ba–Cu–O multilayer structures with amorphous dielectric layers for multichip modules using ion-assisted pulsed-laser deposition
- 10 April 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (15) , 2001-2003
- https://doi.org/10.1063/1.114285
Abstract
Existing technology to construct high‐temperature superconductor(HTSC) multichip modules (MCM’s) incorporating several YBa2Cu3O7−δ(YBCO)thin films and thick dielectric layers are based on epitaxialgrowth of all layers from the template of a single‐crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria‐stabilized zirconia (YSZ) intermediate layer deposited by ion‐assisted pulsed‐laser deposition. Using this technique, a YBCOthin film with T c ∼87 K and J c ∼3×105 A/cm2 was grown on a 5 μm amorphous SiO2 layer. In addition, YBCO/YSZ/SiO2/YSZ/YBCO/CeO2/YSZ and YBCO/YSZ/amorphous‐YSZ/YBCO/CeO2/YBCO multilayerstructures were constructed.Keywords
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