Dependence of base built-in field for InAlAs/InGaAs HBT characteristics

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 615-618
https://doi.org/10.1109/iedm.1987.191502

Abstract

This paper presents the dependence of current gain on base built-in field for npn InAlAs/InGaAs HBTs in a wide field range (0-50 kV/cm) from 300 K to 77 K. Current gain increases with increasing base built-in field up to 30 kV/cm, and then decreases at higher field. These results were analyzed by taking into account the electron transfer between Γ-L valleys, and respective recombination process. A semi-quantitative agreement with experiments was obtained. Increase in the current gain at lower field is understood considering the acceleration of electron by the built-in field and decrease at higher field is due to low velocity of electrons transferred to L valley.

Keywords

INDIUM COMPOUNDS
INDIUM GALLIUM ARSENIDE
HETEROJUNCTION BIPOLAR TRANSISTORS
ELECTRONS
INDIUM PHOSPHIDE
LATTICES
ACCELERATION
DOPING
TEMPERATURE DEPENDENCE
NATIONAL ELECTRIC CODE

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