Analytic expressions of the magnetoresistance due to localization and electron-electron interaction effects. - Application to the amorphous alloys La3Al and La3Ga
- 1 January 1985
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 46 (12) , 2145-2149
- https://doi.org/10.1051/jphys:0198500460120214500
Abstract
We start from the theoretical calculations of Alt'shuler et al. and Lee and Ramakrishnan for the contributions to magnetoresistance from weak localization and electron-electron interactions in a disordered system. We give analytic expressions which can be more easily handled by experimentalists. Our results on the amorphous alloys La3Al and La3Ga are presented and interpreted using these equations to get the best fitKeywords
This publication has 6 references indexed in Scilit:
- Magnetoresistance of amorphous CuZr : Weak localization in a three dimensional systemSolid State Communications, 1984
- Interaction and localization effects in two-dimensional film of superconductor at T > TcSolid State Communications, 1983
- Localization and Electron-Interaction Effects in the Magnetoresistance of Granular AluminumPhysical Review Letters, 1981
- Theory of negative magnetoresistance in three-dimensional systemsSolid State Communications, 1980
- Field-Induced Resistance Minimum in Palladium with Lattice DefectsPhysical Review Letters, 1979
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958