A Fourfold Coordinated Point Defect in Silicon
- 20 May 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 88 (23) , 235501
- https://doi.org/10.1103/physrevlett.88.235501
Abstract
Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.Keywords
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