Refractive index change in Al+-ion-implanted silica glass
- 15 January 1996
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (2) , 1060-1064
- https://doi.org/10.1063/1.360894
Abstract
Al+ ions have been implanted in silica glass at an acceleration energy of 200 eV and doses ranging from 1×1013 to 1×1017 ions cm−2. Infrared reflection spectra and ultraviolet, visible, and near‐infrared absorption spectra have been measured. It was found that refractive index of silica glass increased by 6%–10% after implantation of 1×1017 Al+ ions cm−2. It was deduced that this refractive index change is caused by the formation of Si—Si homobonds, but not by the decrease in Si—O—‐Si bond angle which leads to compaction.This publication has 13 references indexed in Scilit:
- Ion-solid chemistry in implanted amorphous SiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- Experimental evidence for the Si-Si bond model of the 7.6-eV band inglassPhysical Review B, 1991
- Formation of oxygen-deficient type structural defects and state of ions in SiO2 glasses implanted with transition metal ionsJournal of Non-Crystalline Solids, 1990
- Structural defects in chromium-ion-implanted vitreous silicaPhysical Review B, 1989
- Charged-particle interaction with liquids: Ripplon excitationsPhysical Review B, 1989
- Two types of oxygen-deficient centers in synthetic silica glassPhysical Review B, 1988
- Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)Solid State Communications, 1984
- Band limits and the vibrational spectra of tetrahedral glassesPhysical Review B, 1979
- Refractive index profiles induced by ion implantation into silicaJournal of Physics D: Applied Physics, 1976
- Radiation Effects of Bombardment of Quartz and Vitreous Silica by 7.5-kev to 59-kev Positive IonsPhysical Review B, 1960