Ultra-Broadband GaAs HIFET MMIC PA
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1320-1323
- https://doi.org/10.1109/mwsym.2006.249474
Abstract
This paper reports the first MMIC using the HIFET (high-voltage, high-impedance FET) concept with very broadband power performance and small die size. This GaAs MMIC power amplifier has a gain of 21dB plusmn 1dB and over 2W of P1dB over the entire 30 MHz to 2.5 GHz frequency band with 20% efficiency, at a bias voltage of +20V. We believe that this is the first MMIC ever reported which achieves this combination of instantaneous bandwidth, output power, and efficiency, within a die size of 4 mm2Keywords
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