A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures

23 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10636854,p. 119-122
https://doi.org/10.1109/ispsd.1996.509462

Abstract

A realistic performance projection of 4H-SiC UMOSFET structures based on electric field in the gate insulator consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V. The use of P/sup +/ polysilicon gate leads to higher breakdown voltage as the Fowler Nordheim injection from the gate electrode is reduced. It is concluded that the insulator reliability is the limiting factor and therefore the high temperature operation of these devices may not be practical.

Keywords

This publication has 2 references indexed in Scilit:

Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide Structure
Japanese Journal of Applied Physics, 1995
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
IEEE Transactions on Electron Devices, 1993