Conversion process for passivating current shunting paths in amorphous silicon alloy solar cells
- 12 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (11) , 986-988
- https://doi.org/10.1063/1.100049
Abstract
A process is described which provides a simple, automatic means for quickly reducing the deleterious effects of shunts in completed thin-film solar cells. The method has been used to passivate current shunting defects in large area, mass produced solar cells made from amorphous silicon alloys. In the passivation process, photovoltaic devices are exposed to an electrochemical bath which selectively converts the top surface conducting oxide to a lesser conducting state at the vicinity of shunts. The process and its utility in repairing defects will be described.Keywords
This publication has 2 references indexed in Scilit:
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- Photoelectrochemical hydrogen evolution using amorphous silicon electrodes having p-i-n or p-i-n-p-i-n junctionsSolar Energy Materials, 1986