The Thermoelectric Figure of Merit in the Mixed Crystal System p‐(Bi1−xSbx)2Te3
- 1 October 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 161 (2) , 831-835
- https://doi.org/10.1002/pssb.2221610237
Abstract
The figure of merit Z is a measure for the effectiveness of the thermoelectric material p‐(Bi1−xSbx)2Te3and depends on the valence band structure, the charge carrier scattering, the lattice thermal conductivity, and the free carrier density. It is shown that crystals with the compositionx= 0.75 are favoured by the band structure to have the highest figure of merit in this mixed crystal series. In the frame of a consistent model for the electronic structure the theory—experiment comparison gives good quantitative agreement for theZ(S)‐plot in terms of effective masses and lattice thermal conductivity over a wide range of the Seebeck coefficientS.Keywords
This publication has 13 references indexed in Scilit:
- The Conduction Band Parameters and Scattering Mechanisms in Solid Solutions Based on Bi2Te3Physica Status Solidi (b), 1989
- Electrical Properties of Bismuth Telluride Doped with Bismuth IodidePhysica Status Solidi (a), 1989
- Two Valence Subbands in Single Crystals of Bismuth Telluride Doped with Lead and Its Electrical PropertiesPhysica Status Solidi (b), 1989
- Investigation of the Valence Band Structure of Thermoelectric (Bi1−xSbx)2Te3Single CrystalsPhysica Status Solidi (b), 1988
- Relations between Structure, Bonding, and Nature of Point Defects in Layered Crystals of Tetradymite StructurePhysica Status Solidi (b), 1988
- Horizons for new semiconducting materials*Journal of Microscopy, 1987
- IR Transmission Investigations of (Bi1−xSbx)2Te3Single CrystalsPhysica Status Solidi (b), 1986
- Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystalsJournal of Physics and Chemistry of Solids, 1986
- Suppression of antistructural defects in crystals by an increased polarization of bondsPhilosophical Magazine Part B, 1984
- Development of New Materials by Ionized-Cluster Beam TechniqueMRS Proceedings, 1983