Incorporation of acceptor impurities into InP during organometallic vapor phase epitaxy
- 30 June 1984
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 67 (1) , 144-146
- https://doi.org/10.1016/0022-0248(84)90144-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Photoluminescence characterization of solution and lec grown InPJournal of Electronic Materials, 1979
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Crystal growth and properties of group IV doped indium phosphideJournal of Crystal Growth, 1972