Photoelectrochemical laser interference etching for fabrication of 235 nm diffraction gratings on n -InP
- 4 June 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (12) , 657-659
- https://doi.org/10.1049/el:19870470
Abstract
First-order diffraction gratings for 1.55 μm DFB/DBR lasers have been fabricated by photoelectrochemical laser interference etching directly on n-InP substrates (001) with high uniformity and reproducibility. A profile depth of 75 nm was obtained for symmetrical triangular profiles in the (110) plane. In the (110) plane the profiles became asymmetrically U-shaped with a depth of 80 nm.Keywords
This publication has 1 reference indexed in Scilit:
- High Resolution Etching of Gaas and Cds CrystalsMRS Proceedings, 1982