Fabrication and evaluation of submicron-square Si wire waveguides with spot size converters
- 26 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (10928081) , 287-288
- https://doi.org/10.1109/leos.2002.1134040
Abstract
A schematic drawing of Si wire waveguide is shown. We aim at making the Si waveguide with a 300-nm-square section in order to remove the polarization dependence. The spot size converter consists of the tapered Si wire waveguide with a tip width of 60 nm and the 3x3 /spl mu/m-square polymer waveguide.Keywords
This publication has 1 reference indexed in Scilit:
- Fabrication of ultralow-loss Si/SiO_2 waveguides by roughness reductionOptics Letters, 2001