Low-noise multistage avalanche photodetector
- 16 August 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (17) , 518-519
- https://doi.org/10.1049/el:19790374
Abstract
We propose a multistage compound semiconductor avalanche detector for low-noise amplification of photoelectronic signals. In this device, the junctions where amplification takes place are separated by heterojunctions, which act as traps for one species of charge carriers. We demonstrate by a calculation that such a structure will have a substantially improved signal/noise ratio.Keywords
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