Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 μm
- 3 September 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (18) , 651-653
- https://doi.org/10.1049/el:19810457
Abstract
Double-heterostructure lasers with crescent-shaped InGaAsP active layers have been fabricated with CW emission of 1.54 μm. Lowest CW thresholds are 45–47 mA for a 200 μm long cavity at 25°C. The lasing near-field widths are 2.5–3.0 μm and the spectral widths to 10% of peak are 4–5 nm under both CW conditions and modulation up to 320 Mbit/s.Keywords
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