Polycrystalline and Amorphous Si MOS Solar Cells by Anodization

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Abstract
Anodization in various modes for fabrication of polycrystalline and amorphous Si MOS solar cells is investigated. Anodization is found to be very effective for increasing the open-circuit voltage without reducing photocurrent. It is also found that anodized polycrystalline and amorphous Si surfaces give very much improved yields of successfully operating cells as compared with chemically polished surfaces. The mechanism is explained in terms of passivation of material defects in poly-Si and a-Si by selective anodization.

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