A simplified model for subpinchoff conduction in depletion-mode IGFET's
- 1 April 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (4) , 435-441
- https://doi.org/10.1109/T-ED.1978.19104
Abstract
An expression is developed for theI-Vcharacteristics of a depletion-mode device in the subpinchoff region. This expression is found to correlate well with experimental results taken on n-channel polysilicon gate devices, predicting a region of exponential current rise with gate voltage. It is of interest to note that the subpinchoffI-Vcharacteristics of a depletion-mode device form a dual to those of an enhancement-mode device.Keywords
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