Bulk-material device with current-controlled negative resistance

29 November 1968

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 4 (24) , 532-533
https://doi.org/10.1049/el:19680414

Abstract

Current-controlled negative resistance following avalanche breakdown is shown by structures of bulk ptype InSb up to 150°K and of ptype In(As, P) up to 300°K. The high speed of the InSb devices suggests applications as microwave sources or switches.

Keywords

CURRENT CONTROLLED
NEGATIVE RESISTANCE
CONTROLLED NEGATIVE
STRUCTURES
PTYPE
MICROWAVE
BREAKDOWN
SPEED
SWITCHES
AVALANCHE