Technique for controlled adjustment of bubble collapse field in epitaxial garnet films by etching
- 1 August 1975
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 4 (4) , 757-768
- https://doi.org/10.1007/bf02661171
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Three garnet compositions for bubble domain memoriesJournal of Electronic Materials, 1974
- Growth and characteristics of high mobility bubble domain garnets with improved temperature stabilityMaterials Research Bulletin, 1973
- Controlled adjustment of bubble domain parameters in epitaxial garnet films by thermal annealingJournal of Applied Physics, 1973
- The Etch Rate of Gadolinium Gallium Garnet in Concentrated Phosphoric Acid of Varying CompositionJournal of the Electrochemical Society, 1973
- Defects in Garnet Substrates and Epitaxial Magnetic Garnet Films Revealed by Phosphoric Acid EtchingJournal of the Electrochemical Society, 1973
- Chemical polishing of garrets with phosphoric acidJournal of Electronic Materials, 1972