Properties of ion-implanted junctions in mercury—cadmium—telluride
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (1) , 37-43
- https://doi.org/10.1109/t-ed.1980.19816
Abstract
The formation of n-p junctions by ion-implantation in Hg0.71Cd0.29Te is shown to be a result of implantation damage. n-p photodiodes have been made by implantation of Ar, B, Al, and P in a p-type substrate with acceptor concentration of 4 × 1016cm-3. The implanted n-type layer is characterized by sheet electron concentration of 1014to 1015cm-2and electron mobility higher than 103cm2. V-1. s-1, for ion doses in the range 1013-5 × 1014cm-2. The photodiodes have a spectral cutoff of 5.2 µm, quantum efficiency higher than 80 percent, and differential resistance by area product above 2000 Ω . cm2at 77 K. The temperature dependence of the differential resistance is discussed. The junction capacitance dependence on reverse voltage fits a linearly graded junction model. Reverse current characteristics at 77 K have been investigated using gate-controlled diodes. The results suggest that reverse breakdown is dominated by interband tunneling in field-induced junctions at the surface, for both polarities of surface potential.Keywords
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