Selective photochemical dry etching of GaAs/AlGaAs and InGaAs/InAlAs heterostructures

7 November 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (23) , 2113-2115
https://doi.org/10.1049/el:19911309

Abstract

Selective photochemical dry etching of GaAs layers on AlGaAs using HCl gas and InGaAs layers on InAlAs using CH₃Br gas is studied. A low pressure mercury lamp was used as the deep UV light source. A selectivity of more than 150 for GaAs over AlGaAs and more than 60 for InGaAs over InAlAs was obtained.

Keywords

GAAS
CH3BR GAS
HCL GAS
SEMICONDUCTORS
DEEP UV LIGHT SOURCE
INGAAS-INALAS
SELECTIVE ETCHING
INGAAS
PHOTOCHEMICAL DRY ETCHING
HETEROSTRUCTURES
GAAS-ALGAAS
LOW PRESSURE MERCURY LAMP

This publication has 1 reference indexed in Scilit:

New Device Structure for 4Kb HEMT SRAM
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984