Selected-area molecular beam epitaxy on ion-implanted GaAs substrates

14 October 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (21) , 933-935
https://doi.org/10.1049/el:19820636

Abstract

We present a method of selective growth of GaAs which utilises ion implantation for defining conductive monocrystalline and high-resistivity nonmonocrystalline regions on a GaAs substrate. By molecular beam epitaxy, nonmonocrystalline GaAs is obtained on the implanted areas of the GaAs substrate. Selected area molecular beam epitaxy is performed directly on an unmasked substrate.

Keywords

ION-IMPLANTED GAAS SUBSTRATES
SELECTIVE GROWTH
SEMICONDUCTOR GROWTH
NONMONOCRYSTALLINE GAAS
GAAS
MBE
MOLECULAR BEAM EPITAXY
ION IMPLANTATION

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