Precise control of multiwall carbon nanotube diameters using thermal chemical vapor deposition
- 25 March 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (12) , 2171-2173
- https://doi.org/10.1063/1.1463204
Abstract
We grow multiwall carbon nanotube (CNT) films using thermal chemical vapor deposition at atmospheric pressure using a mixture of acetylene and nitrogen from a 4-nm-thick Ni film catalyst. CNTs are characterized using electron microscopy and Rutherford backscattering spectrometry. CNTs grown with this method are extremely uniform in diameter, both throughout the sample and within the lengths of individual tubes. Nanotube outer diameters, ranging from 5–350 nm, and the total deposition of carbon material, increase exponentially with growth temperature from 630 °C–790 °C.Keywords
This publication has 11 references indexed in Scilit:
- Temperature effect on the growth of carbon nanotubes using thermal chemical vapor depositionChemical Physics Letters, 2001
- Multiwalled carbon nanotubes as ultrasensitive electrometersApplied Physics Letters, 2001
- Supercapacitor electrodes from multiwalled carbon nanotubesApplied Physics Letters, 2000
- Low-Friction Nanoscale Linear Bearing Realized from Multiwall Carbon NanotubesScience, 2000
- Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor depositionApplied Physics Letters, 2000
- Highly-ordered carbon nanotube arrays for electronics applicationsApplied Physics Letters, 1999
- Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor depositionApplied Physics Letters, 1998
- Synthesis of Large Arrays of Well-Aligned Carbon Nanotubes on GlassScience, 1998
- A Carbon Nanotube Field-Emission Electron SourceScience, 1995
- Helical microtubules of graphitic carbonNature, 1991