Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method
- 1 January 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Journal on Solidstate and Electron Devices
- Vol. 3 (5) , 133-136
- https://doi.org/10.1049/ij-ssed.1979.0028
Abstract
The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.Keywords
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