The temperature dependence of the photoconductivity of n-type a-Si:H and the effect of staebler-wronski defects
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 823-826
- https://doi.org/10.1016/0022-3093(87)90197-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Transient photoconductivity in n-type a-Si: HPhilosophical Magazine Letters, 1987
- Recombination of trapped carriers in a-Si:H probed by subbandgap excitationJournal of Non-Crystalline Solids, 1985
- Photoconductivity and photoluminescence of a-Si:H at low temperatureJournal of Non-Crystalline Solids, 1984
- Recombination processes in-Si:H: Spin-dependent photoconductivityPhysical Review B, 1983
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977