Strain confinement and thermodynamics of free excitons in a direct-gap semiconductor
- 15 September 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (6) , 3590-3592
- https://doi.org/10.1103/physrevb.28.3590
Abstract
Long-lived paraexcitons have been confined by a strain-induced parabolic potential well in O. The excitons are found to behave as a highly diffusive classical gas at the crystal lattice temperature, as determined from their spatial and energy distributions between 1.5 and 4.2 K. Strain confinement and spatially selective resonant excitation provide a new method for examining the thermodynamics and interparticle kinetics of this direct-gap exciton.
Keywords
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