In Situ Microlithography of Si and GaAs by a Focused Ion Beam in a 200 keV TEM

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Abstract
In situ microfabrication by a focused ion beam (FIB) during observation in a transmission electron microscope (TEM) was successfully carried out on the specimens of n-type Si(100) and GaAs(100). An FIB system attached to the TEM was developed by modifying a specimen chamber of a 200 keV TEM to be compatible with the injection of Ion beams. The minimum ion beam diameter of about 200 nm and the Ion current of 80 pA were obtained at the specimen position with the working distance of about 100mm for 25 keV Ga ions. The difference in the microstructure after the FIB microlithography was found between Si and GaAs. Ga ions sputtered out Si atoms uniformly, but were partially Implanted at the shallow portion beneath the surface, while the selective etching of As and the implantation of Ga resulted in the formation of amorphous and/or liquid precipitates of Ga on the surface of GaAs. It should be noted that the structural and compositional changes will be the key factors to control the heterogeneous structure of semiconductors by ion beam lithography.

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