Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- 1 May 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (5A) , L297
- https://doi.org/10.1143/jjap.21.l297
Abstract
Photoluminescence (PL) intensity in InGaAsP/InP double-heterostructures is studied as a function of the excitation level in connection with the output optical power of the InGaAsP/InP light emitting diode (LED) at a high injection level. At excitation levels higher than 1000 W/cm2, the PL intensity is directly proportional to the output optical power of the LED at 8000 A/cm2, whereas at excitation levels lower than 100 W/cm2, there is no such correlation. The output optical power of an LED can be predicted prior to fabrication by the PL intensity in the material at an excitation level comparable to the current injection level in the operating LED.Keywords
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