Type-II quantum-well lasers for the mid-wavelength infrared

Abstract
We discuss an improved mid‐wave infrared diode laser structure based on InAs‐Ga1−x In x Sb‐ InAs‐Ga1−x Al x Sb Type‐II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement.

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