Burst noise of silicon planar transistors
- 1 June 1966
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 2 (6) , 228-230
- https://doi.org/10.1049/el:19660194
Abstract
An important random phenomenon has been observed on low-level silicon planar transistors which has the aspect of a low-frequency squarewave of constant magnitude and random frequency. The step magnitude depends on temperature and biasing current; their probability of duration may be approached by a random Poisson process.Keywords
This publication has 1 reference indexed in Scilit:
- Chronic Carbon Monoxide PoisoningNew England Journal of Medicine, 1960