Phonon-assisted transitions to a temperature-independent deep level in Co–Si

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Abstract
Photoconductivity has been studied in p‐type and high‐resistivity n‐type silicon compensated by cobalt. Threshold energies of 0.505, 0.537, and 0.572 eV are observed to be independent of temperature within the experimental accuracy of ±2 meV. This is the first direct experimental evidence of the temperature independence of a deep level in Si. The photoconductivity which is stronger for p‐type samples than for n type leads to its identification as a new deep level 0.521 eV ±2 meV from the valence band; the phototransitions are phonon assisted.
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