High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 9-12
• https://doi.org/10.4028/www.scientific.net/msf.264-268.9

Abstract

Keywords

• HALL-EFFECT
• LIFETIME
• SEMI-INSULATING (SI)
• VANADIUM DOPING