Thickness Dependence of Electron Mobility of InSb Films

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Abstract
The thickness dependence of the room temperature electron mobility of InSb films is shown to be in good qualitative but poor quantitative agreement with theoretical mobility limiting models based on diffuse or specular surface scattering. An alternative model based on the presence of a surface accumulation layer on films with bulklike properties is shown to provide a fair quantitative agreement with experimental data.

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