Deep levels in CdTe
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 490-496
- https://doi.org/10.1016/0022-0248(90)90764-c
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Transient photoconductivity measurements in semi-insulating GaAs. I. An analog approachJournal of Applied Physics, 1987
- DLTS Study on the Gradation of the Trap Concentration Profiles in n-CdTe CrystalsJapanese Journal of Applied Physics, 1985
- Deep Levels of High Resistivity Sb Doped CdTeJapanese Journal of Applied Physics, 1985
- Deep levels in n-CdTeJournal of Applied Physics, 1984
- Electronic properties of deep levels in p-type CdTeJournal of Vacuum Science & Technology A, 1983
- A DLTS study of deep levels in n‐type CdTeJournal of Vacuum Science and Technology, 1982
- Thermally-Stimulated Current in p-Type CdTe Annealed in Various AtmospheresJapanese Journal of Applied Physics, 1982
- DLTS studies of deep levels in semiconducting N-CdTe single crystalsJournal of Physics and Chemistry of Solids, 1982
- The Defect Structure of Phosphorus‐Doped CdTeJournal of the Electrochemical Society, 1977
- Deep-level energy spectroscopy in p-type CdTe using TSC measurementsJournal of Applied Physics, 1976