EPR of a thermally induced defect in silicon
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 142-144
- https://doi.org/10.1063/1.89630
Abstract
Two EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe‐diffused silicon. The enthalpy and entropy for the Fe0 formation are determined to be 2.39 (±0.03) eV and 3.3 (±0.3) K, respectively. The migration energy of Fe0 is 0.69 (±0.03) eV. The transition‐metal ion is present in as‐grown silicon and moves to the Td interstitial site upon heat treatment.Keywords
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