Si-MBE SOI
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous siliconApplied Physics Letters, 1982
- Etching of SiO2 Films by Si in Ultra-High VacuumJapanese Journal of Applied Physics, 1982
- Oxidation of Porous Silicon and Properties of Its Oxide FilmJapanese Journal of Applied Physics, 1980
- Structure of Porous Silicon Layer and Heat‐Treatment EffectJournal of the Electrochemical Society, 1978
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967